发明授权
- 专利标题： Semiconductor pressure sensor and its manufacturing method
- 专利标题（中）： 半导体压力传感器及其制造方法
-
申请号： US849832申请日： 1996-10-29
-
公开(公告)号： US5880509A公开(公告)日： 1999-03-09
- 发明人: Tatsuya Watanabe , Takahiro Kudo , Kyoichi Ikeda
- 申请人： Tatsuya Watanabe , Takahiro Kudo , Kyoichi Ikeda
- 申请人地址： JPX Tokyo
- 专利权人： Yokogawa Electric Corporation
- 当前专利权人： Yokogawa Electric Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-071211 19950329
- 主分类号： G01L9/04
- IPC分类号： G01L9/04 ; G01L9/00 ; G01L19/06 ; H01L29/84 ; H01L29/82
摘要：
The present invention relates to a semiconductor pressure sensor comprisinga single crystal silicon substrate;a closed air gap chamber provided on the said single crystal silicon substrate, on which a measured diaphragm made by epitaxial growth is formed and which has a predetermined narrow gap backing up the application of over-pressure to the said diaphragm; anda strain detection element incorporated in the said measuring diaphragm.
公开/授权文献
- US4713588A Image pickup tube 公开/授权日：1987-12-15
信息查询
