发明授权
- 专利标题： Self-aligned contact structures using high selectivity etching
- 专利标题（中）： 使用高选择性蚀刻的自对准接触结构
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申请号： US5568申请日： 1998-01-12
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公开(公告)号： US5872063A公开(公告)日： 1999-02-16
- 发明人: Li-chih Chao , Jhon-Jhy Liaw , Yuan-Chang Huang , Jin-Yuan Lee
- 申请人： Li-chih Chao , Jhon-Jhy Liaw , Yuan-Chang Huang , Jin-Yuan Lee
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/60 ; H01L21/70
摘要：
A self-aligned structure and method of etching contact holes in the self-aligned structure are described. The dielectric materials, etching methods, and etchants are chosen to provide high selectivity etching. The structure comprises an electrode with a silicon oxy-nitride cap and silicon oxy-nitride spacers on the sidewalls of the electrode and the cap. An etch stop layer of silicon nitride is deposited over the substrate covering the spacers and cap. A layer of silicon oxide is deposited over the etch stop layer. Etching methods and etchants are used which provide a ratio of the etching rate of silicon oxide to the etching rate of silicon nitride or silicon oxy-nitride of at least eight and a ratio of the etching rate of silicon nitride to the etching rate of silicon oxy-nitride of at least two.
公开/授权文献
- US5322599A Shaped-tube electrolytic machining process 公开/授权日：1994-06-21
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