发明授权
- 专利标题： Process for preparing single crystal material and composite material for forming such single crystal material
- 专利标题（中）： 制备单晶材料的方法和用于形成这种单晶材料的复合材料
-
申请号： US563383申请日： 1995-11-28
-
公开(公告)号： US5837053A公开(公告)日： 1998-11-17
- 发明人: Furen Wang , Tadataka Morishita
- 申请人： Furen Wang , Tadataka Morishita
- 申请人地址： JPX
- 专利权人： International Superconductivity Technology Center
- 当前专利权人： International Superconductivity Technology Center
- 当前专利权人地址： JPX
- 优先权： JPX6-304735 19941208
- 主分类号： C30B1/02
- IPC分类号： C30B1/02 ; C30B29/22 ; H01L21/205
摘要：
A single crystal material is prepared by forming a layer of an amorphous substance over a surface of a substrate of a single crystal having the same chemical composition as that of the amorphous substance, the resulting composite material is heated to epitaxially grow the amorphous layer into a single crystal layer. A composite material for producing such a single crystal material is also disclosed which includes a substrate of a single crystal, and a layer of an amorphous substance having the same chemical composition as that of the substrate, the layer having such a thickness that the layer as a whole can epitaxially grow to make a single crystal layer.
公开/授权文献
- US5065528A Drying apparatus utilizing solar heat 公开/授权日：1991-11-19
信息查询
IPC分类:
