发明授权
- 专利标题： Method of manufacturing a BIMIS
- 专利标题（中）： 制造BIMIS的方法
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申请号： US563335申请日： 1995-11-28
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公开(公告)号： US5773340A公开(公告)日： 1998-06-30
- 发明人: Takahiro Kumauchi , Takashi Hashimoto , Osamu Kasahara , Satoshi Yamamoto , Yoichi Tamaki , Takeo Shiba , Takashi Uchino
- 申请人： Takahiro Kumauchi , Takashi Hashimoto , Osamu Kasahara , Satoshi Yamamoto , Yoichi Tamaki , Takeo Shiba , Takashi Uchino
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-298233 19941201
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/331 ; H01L21/8222 ; H01L21/8249 ; H01L27/06 ; H01L29/165 ; H01L29/732 ; H01L29/737
摘要：
A method of manufacturing an improved bipolar transistor or BiCMOS having a phosphorus-doped polysilicon emitter electrode is disclosed. The method comprises forming an emitter electrode wherein a phosphorus-doped amorphous silicon film is deposited at temperature not higher than 540.degree. C. and then subjected to low temperature annealing treatment at a temperature of 600.degree. C. to 750.degree. C., under which the amorphous silicon is converted to a polysilicon and the phosphorus present in the amorphous silicon film is diffused into a base region to form an emitter region, followed by high temperature/short time annealing treatment at a temperature of 900.degree. C. to 950.degree. C. so that an activation rate of an impurity in a boron-doped polysilicon base electrode or source-drain regions of MOS.cndot.FET is improved.
公开/授权文献
- USD325275S Disposable trash collection receptacle 公开/授权日：1992-04-07
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