Semiconductor piezoresistive sensors are fabricated by a process that includes plasma enhanced chemical vapor deposition and selective laser recrystallization. An insulating dielectric layer is first vapor deposited on a flexible substrate. A layer of highly resistive, doped semiconductor material is then deposited over the insulating layer. Metal contacts for the as yet to be formed piezoresistive sensor are deposited at selected locations on the semiconductor layer. Optionally, a passivating layer is then deposited over the semiconductor layer. Through selective laser annealing, portions of the semiconductor layer between selected metal contacts are recrystallized to a preselected resistance to form piezoresistive sensor elements. The non-annealed portions of the semiconductor layer remain to act as insulators between adjacent formed sensor elements.