发明授权
- 专利标题： Semiconductor device having a multilayered wiring structure
- 专利标题（中）： 具有多层布线结构的半导体器件
-
申请号： US291037申请日： 1994-08-15
-
公开(公告)号： US5402005A公开(公告)日： 1995-03-28
- 发明人: Kohichi Takayama , Masanori Kinugasa , Munenobu Kida , Shuichi Shoji
- 申请人： Kohichi Takayama , Masanori Kinugasa , Munenobu Kida , Shuichi Shoji
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX1-9843 19890120
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/48 ; H01L29/46 ; H01L29/54 ; H01L29/62
摘要：
At least one slit having a predetermined shape is formed around a contact region of a lower wiring layer formed on a substrate, and an insulating portion formed integrally with an insulating layer is embedded in this slit. This insulating layer is formed on the lower wiring layer and has a contact hole located at a position corresponding to the contact region. Since the insulating portion as a rectangular projecting portion projects into the slit downwardly from the rigid insulating layer, positional errors caused by thermal expansion of the lower wiring layer in annealing of the upper wiring layer can be suppressed, and an abnormal geometry such as a projection on the upper wiring layer can be prevented. In addition, a semiconductor device free from interwiring short-circuiting and excellent in flatness can be obtained.
公开/授权文献
- US4924805A Pump system for moistener nozzle 公开/授权日：1990-05-15
信息查询
IPC分类:
