发明授权
- 专利标题： Semiconductor substrate having a superconducting thin film
- 专利标题（中）： 具有超级薄膜的半导体衬底
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申请号： US856824申请日： 1992-03-25
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公开(公告)号： US5221660A公开(公告)日： 1993-06-22
- 发明人: Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
- 申请人： Hideo Itozaki , Keizo Harada , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
- 申请人地址： JPX Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX62-328483 19871225; JPX62-328484 19871225; JPX62-328485 19871225; JPX62-328486 19871225; JPX62-328487 19871225; JPX62-328488 19871225; JPX62-328489 19871225; JPX62-328490 19871225; JPX62-328491 19871225; JPX62-328492 19871225; JPX62-328494 19871225; JPX62-328493 19871228
- 主分类号： H01L39/14
- IPC分类号： H01L39/14 ; H01L39/24
摘要：
A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.
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