Invention Grant
- Patent Title: Edge shrinkage compensated devices
- Patent Title (中): 边缘收缩补偿装置
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Application No.: US837727Application Date: 1992-02-19
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Publication No.: US5189595APublication Date: 1993-02-23
- Inventor: James Dunkley
- Applicant: James Dunkley
- Applicant Address: CA Tustin
- Assignee: Silicon Systems, Inc.
- Current Assignee: Silicon Systems, Inc.
- Current Assignee Address: CA Tustin
- Main IPC: H01L27/04
- IPC: H01L27/04 ; H01G13/00 ; H01L21/82 ; H01L21/822 ; H01L27/08
Abstract:
Improved, edge compensated capacitors and a method for making the same are presented. The present invention arranges individual cells of capacitors and uses passive dummy cells so as to achieve a ratio between the length of the exposed perimeters of the cells of the two capacitors that is equal to the desired capacitance ratio between the two capacitors. By doing so, the edge shrinkage effects on both cells are taken into account, and accurate capacitor ratios are maintained. In one embodiment of the invention the number of intersections between exposed edges of the cells of the two capacitors are also adjusted to conform to the capacitor ratio to achieve additional edge shrinkage compensation.
Public/Granted literature
- US5795929A Polymer enhanced asphalt emulsion Public/Granted day:1998-08-18
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