发明授权
- 专利标题： Cryogenic rectification system for enhanced argon production
- 专利标题（中）： 低温精馏系统，用于提高氩气产量
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申请号： US743734申请日： 1991-08-12
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公开(公告)号： US5161380A公开(公告)日： 1992-11-10
- 发明人: Harry Cheung
- 申请人： Harry Cheung
- 申请人地址： CT Danbury
- 专利权人： Union Carbide Industrial Gases Technology Corporation
- 当前专利权人： Union Carbide Industrial Gases Technology Corporation
- 当前专利权人地址： CT Danbury
- 主分类号： C01B23/00
- IPC分类号： C01B23/00 ; F25J3/04
摘要：
A cryogenic rectification system comprising two cryogenic rectification plants wherein a fluid mixture comprising argon and nitrogen is withdrawn in a defined manner from the first plant and passed into the second plant such that argon production is enhanced to more than offset the additional separation power requirements.
公开/授权文献
- US5926317A Multilayer thin film dielectric bandpass filter 公开/授权日：1999-07-20
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