发明授权
- 专利标题: Semiconductor strain detector
- 专利标题(中): 半导体应变检测器
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申请号: US458538申请日: 1989-12-28
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公开(公告)号: US4986131A公开(公告)日: 1991-01-22
- 发明人: Susumu Sugiyama , Shiro Yamashita , Hirofumi Funabashi
- 申请人: Susumu Sugiyama , Shiro Yamashita , Hirofumi Funabashi
- 申请人地址: JPX Aichi
- 专利权人: Kabushiki Kaisha Toyota Chuo Kenkyusho
- 当前专利权人: Kabushiki Kaisha Toyota Chuo Kenkyusho
- 当前专利权人地址: JPX Aichi
- 优先权: JPX63-333863 19881228
- 主分类号: H01L29/84
- IPC分类号: H01L29/84 ; G01L1/22 ; G01L9/00 ; G01L9/06
摘要:
In a semiconductor strain detector, the temperature characteristic of the output of a zero-point temperature compensating circuit is added to the zero-point temperature characteristic of the output of a bridge circuit composed of strain gauges, to perform a zero-point temperature compensation of the final output. Further, two kinds of diffusion resistors having different surface impurity densities are used in each amplifying circuit to perform a sensitivity-temperature compensation in which a temperature coefficient of sensitivity is considered up to the second-order term.
公开/授权文献
- US4503419A Oil level detection circuit 公开/授权日:1985-03-05
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