发明授权
- 专利标题: Semiconductor pressure sensor
- 专利标题(中): 半导体压力传感器
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申请号: US531428申请日: 1990-05-31
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公开(公告)号: US4984466A公开(公告)日: 1991-01-15
- 发明人: Katsuaki Yasui , Yasuo Tada , Akira Takashima
- 申请人: Katsuaki Yasui , Yasuo Tada , Akira Takashima
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX1-65133[U] 19890602
- 主分类号: G01L9/04
- IPC分类号: G01L9/04 ; G01L9/00
摘要:
A semiconductor pressure sensor comprising two pressure sensing diaphragms attached to a support frame embedded within a bonding agent joining two parts of a housing which defines therein fluid passages in communication with two pressure sensing diaphragms. The support frame includes a support plate portion and terminal portions having the inner ends embedded within the bonding agent and the outer ends projecting outwardly of the bonding agent for external connections. The support frame is formed by cutting a lead frame, which has a support frame portion, terminal portions and a surrounding frame integrally connected together, substantially along the outer contour of the housing except for the terminals. A method for manufacturing the pressure sensor is also disclosed.
公开/授权文献
- US5603729A Portable reusable thermal therapeutic device 公开/授权日:1997-02-18
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