Invention Grant
- Patent Title: Temperature sensing apparatus
- Patent Title (中): 温度传感装置
-
Application No.: US80890Application Date: 1987-08-03
-
Publication No.: US4854731APublication Date: 1989-08-08
- Inventor: James O. M. Jenkins
- Applicant: James O. M. Jenkins
- Applicant Address: GB7
- Assignee: Siliconix Limited
- Current Assignee: Siliconix Limited
- Current Assignee Address: GB7
- Priority: GBX8620031 19860818; GBX8714380 19870619
- Main IPC: H01L27/04
- IPC: H01L27/04 ; G01K1/16 ; G01K7/01 ; H01L21/822 ; H01L23/58
Abstract:
It is desirable to be able to sense the temperature of a semiconductor element to detect, for example, overheating of that element. A temperature sensing apparatus is disclosed which comprises a polysilicon device, functioning as a temperature transducer and integrated with a semiconductor element. A silicon oxide layer separates the temperature transducer device from the element.
Public/Granted literature
- US5881619A Method and apparatus for cutting blocks of solid energetic materials Public/Granted day:1999-03-16
Information query
IPC分类: