发明授权
- 专利标题: Process for manufacturing high purity silica
- 专利标题(中): 制造高纯度二氧化硅的方法
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申请号: US878773申请日: 1986-06-25
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公开(公告)号: US4683128A公开(公告)日: 1987-07-28
- 发明人: Koichi Orii , Masashi Nishida , Junsuke Yagi , Iwao Ohshima
- 申请人: Koichi Orii , Masashi Nishida , Junsuke Yagi , Iwao Ohshima
- 申请人地址: JPX Tokyo JPX Tokyo
- 专利权人: Nitto Chemical Industry Co., Ltd.,Mitsubishi Rayon Co., Ltd.
- 当前专利权人: Nitto Chemical Industry Co., Ltd.,Mitsubishi Rayon Co., Ltd.
- 当前专利权人地址: JPX Tokyo JPX Tokyo
- 优先权: JPX60-139145 19850627; JPX60-139146 19850627; JPX61-22068 19860205; JPX61-22069 19860205
- 主分类号: C01B33/152
- IPC分类号: C01B33/152 ; C01B33/18 ; C03B37/01 ; C03B37/095 ; C03C13/00 ; C01B33/12
摘要:
This invention deals with a process for manufacturing high purity silica which comprises making an aqueous alkali silicate solution into fine fibrous gel in a coagulant, treating the fibrous gel obtained with an acid-containing solution, and then with water to extract and remove impurities; and optionallly heating a resulting silica at a temperature of 1,000.degree. C. or higher. Thus obtained silica is preferably used as a filler, especially, the one for resin compositions for encapsulating electronic parts; etc.
公开/授权文献
- US5951318A Bulb socket 公开/授权日:1999-09-14
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