发明授权
US4624741A Method of fabricating electro-mechanical modulator arrays 失效
制造机电调制器阵列的方法

Method of fabricating electro-mechanical modulator arrays
摘要:
Method of forming small electro-mechanical modulator chips each with a row of flexible light reflecting fingers which may be butted with other like chips to form a full width electro-mechanical array by forming a silicon dioxide layer on a silicon wafer, forming a conductive layer on the silicon dioxide layer, etching away the conductive layer except for discrete rows of fingers, etching the silicon dioxide layer to create a mask delineating a well below the fingers and line openings in the silicon dioxide at the points where the wafer is to be separated into chips, etching the wafer to open the well and form V-shaped grooves along the openings, cutting a groove in the other side of the wafer along a centerline parallel to, but offset from the centerline of each V-shaped shaped groove by an amount sufficient to allow the wafer (111) crystalline plane to extend from the V-shaped groove to the cut groove, and applying a downward force to the wafer to fracture the wafer along along the (111) plane and separate the wafer into chips.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的(在半导体材料上制作电极的入H01L21/28)
H01L21/302 .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割
H01L21/306 ......化学或电处理,例如电解腐蚀(形成绝缘层的入H01L21/31;绝缘层的后处理入H01L21/3105)
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