发明授权
US4356210A Method for forming a protecting film on side walls of a semiconductor
device
失效
在半导体器件的侧壁上形成保护膜的方法
- 专利标题： Method for forming a protecting film on side walls of a semiconductor device
- 专利标题（中）： 在半导体器件的侧壁上形成保护膜的方法
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申请号： US223152申请日： 1981-01-07
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公开(公告)号： US4356210A公开(公告)日： 1982-10-26
- 发明人: Hajime Imai , Masahiro Morimoto , Takao Fujiwara
- 申请人： Hajime Imai , Masahiro Morimoto , Takao Fujiwara
- 申请人地址： JPX Kanagawa
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX53-92777 19780729; JPX53-148838 19781201
- 主分类号： C23C14/04
- IPC分类号： C23C14/04 ; C23C14/22 ; C23C14/34 ; H01L21/31 ; H01L31/0216 ; H01L31/18 ; B05D3/06 ; C23C17/00
摘要：
A method for forming a protecting film on the side walls of a semiconductor device having an exposed PN junction at the side walls, e.g. a semiconductor laser, involves placing the device on a substrate target made of a protecting film material. Energetic particles are impinged against the substrate target. Particles of the material are emitted from the substrate target and deposited on only the side walls to form the protecting film.
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