Invention Application
- Patent Title: MASKLESS PHOTOLITHOGRAPHY PROCESS FOR THE SYNTHESIS OF METALLIC NANOSTRUCTURES OF FRACTAL GEOMETRY DIRECTLY ON 2D PRINTED CARBON-BASED NANOSHEETS UNDER ROOM TEMPERATURE UV IRRADIATION
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Application No.: US18813454Application Date: 2024-08-23
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Publication No.: US20250068086A1Publication Date: 2025-02-27
- Inventor: Hicham Hamoudi , Sara Iyad Mohd Saleh Ahmad
- Applicant: Qatar Foundation for Education, Science and Community Development
- Applicant Address: QA Doha
- Assignee: Qatar Foundation for Education, Science and Community Development
- Current Assignee: Qatar Foundation for Education, Science and Community Development
- Current Assignee Address: QA Doha
- Main IPC: G03F7/00
- IPC: G03F7/00 ; B33Y40/20 ; B33Y70/10 ; B33Y80/00 ; G03F7/20 ; H01L21/04

Abstract:
A maskless photolithography technique is provided for the direct synthesis and integration of metallic nanostructures exhibiting branching and flower-like fractal geometries on two-dimensional (2D) carbon-based nanosheets, employing room temperature ultraviolet (UV) irradiation. The photolithography process leverages the structural and electronic properties of carbon-based nanosheets comprising semiconducting organic carbon-based molecular monolayers connected by metallic atoms providing strong covalent linkages. By embedding the metallic precursor for fractal nanostructures within the carbon-based nanosheet during the initial synthesis, UV irradiation initiates the photoreduction of metallic atoms and their growth into fractal nanostructures with high yield and uniformity.
Information query