Invention Application
- Patent Title: APPLICATION OF A PROTECTIVE ATOMIC LAYER DEPOSITION (ALD) OR PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) LAYER ON A SEMICONDUCTOR DIE CONNECTED TO A SUBSTRATE VIA A SINTERED LAYER
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Application No.: US18806227Application Date: 2024-08-15
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Publication No.: US20250062169A1Publication Date: 2025-02-20
- Inventor: Frederik Otto , Lukas Mikutta , Harry Sax , Michael Weinhart
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Priority: EP23191961 20230817
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L21/56 ; H01L23/00
Abstract:
A method for fabricating a semiconductor device includes: providing a substrate; applying a sinter paste layer to the substrate; placing a semiconductor die on or above the sinter paste layer; performing a sintering process to convert the sinter paste layer to a sintered layer; and applying a protective layer by atomic layer deposition or by plasma-enhanced chemical layer deposition onto the semiconductor die and the sintered layer.
Information query
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