A semiconductor device includes a memory cell connected to a word line and a bit line. The semiconductor device also includes a line driving circuit configured to apply a program voltage to the word line. The semiconductor device further includes a page buffer comprising a plurality of latches comprising at least one dynamic latch and at least one static latch and configured to control a voltage level of the bit line after the start of a program operation. The semiconductor device additionally includes a control circuit configured to control the page buffer to program, into the memory cell, data that have been stored in the static latch or store the data in the dynamic latch based on a temperature of the semiconductor device, when receiving a pause command during the program operation.