Methods, systems, and devices for low parameter plasma ashing techniques are described. The method may include performing an etching process on a substrate comprising a photoresist layer. In some cases, the method may include selecting at least a temperature of a clamp for holding the substrate, a temperature of a process chamber configured to perform the plasma ashing process, a pressure of the process chamber, and a power of a plasma source based at least in part on performing the etching process. The method may further include generating a plasma that comprises oxygen, applying the plasma to the photoresist layer, and exposing the photoresist layer of the substrate to the plasma at the selected temperature, pressure, and power to at least partially remove the photoresist layer from the substrate.