- 专利标题: START-UP CIRCUIT FOR BANDGAP REFERENCES IN A NAND FLASH
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申请号: US18618456申请日: 2024-03-27
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公开(公告)号: US20240331787A1公开(公告)日: 2024-10-03
- 发明人: Shubham Raj SINGH , Arvind THAKUR , Subodh Prakash TAIGOR
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: IN 2341023172 2023.03.29
- 主分类号: G11C29/02
- IPC分类号: G11C29/02 ; G11C29/52
摘要:
Various example embodiments relate to a capacitor action-based start-up circuit for bandgap reference (BGR) generation. The start-up circuit comprises a start-up capacitor connected to a VBG node of a BGR sub-circuit. The start-up capacitor determines if a state of operation of the BGR sub-block is one of normal, and failure. The start-up circuit comprises an output transistor connected to an NB node of the BGR. The output transistor charges the NB node to maintain normal operation of the BGR sub-block, if the state of operation of the BGR sub-block is failure, thereby facilitating dynamic behavior.
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