发明公开
- 专利标题: SEMICONDUCTOR DEVICE
-
申请号: US18590804申请日: 2024-02-28
-
公开(公告)号: US20240321865A1公开(公告)日: 2024-09-26
- 发明人: Syunsuke SASAKI , Shouichi OZAKI , Kenichi SUGAWARA , Hiroaki NAKASA , Takeshi MIYABA , Maya OHSAKA , Shoki ITO
- 申请人: Kioxia Corporation
- 申请人地址: JP Tokyo
- 专利权人: Kioxia Corporation
- 当前专利权人: Kioxia Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP 23046953 2023.03.23
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L27/092 ; H01L29/06 ; H10B43/35 ; H10B43/40
摘要:
A semiconductor device includes a first pad to which a high voltage is to be input, a second pad to which a low voltage is to be input, a third pad to which a ground voltage is to be input, and a protection circuit provided between the first pad and the third pad. The protection circuit includes a first protection element group including a plurality of first transistors arranged in a first direction, a second protection element group including a plurality of second transistors arranged in the first direction and disposed apart from the first protection element group in a second direction orthogonal to the first direction, a guard ring provided around the first and second protection element groups, and an intermediate guard ring provided between the first protection element group and the second protection element group and connected to the third pad via a resistance element.
信息查询
IPC分类: