Invention Publication
- Patent Title: REDISTRIBUTION LAYERS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES
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Application No.: US18641836Application Date: 2024-04-22
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Publication No.: US20240274558A1Publication Date: 2024-08-15
- Inventor: Hsiang-Ku Shen , Dian-Hau Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor structure includes a first dielectric layer over a metal line and a redistribution layer (RDL) over the first dielectric layer. The RDL is electrically connected to the metal line. The RDL has a curved top surface and a footing feature, where the footing feature extends laterally from a side surface of the RDL. A second dielectric layer is disposed over the RDL, where the second dielectric layer also has a curved top surface.
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