A semiconductor device includes a first die including a patterned conductive pad, a second die stacked over and electrically coupled to the first die, a bonding dielectric layer between the first and second dies, and a through die via penetrating through the first die and passing through the patterned conductive pad and the bonding dielectric layer. The second die includes a conductive pad directly over the patterned conductive pad. The bonding dielectric layer bonds the patterned conductive pad to the conductive pad, and the through die via directly lands on the conductive pad.