A multi-active area semiconductor structure and a method for manufacturing same. The multi-active area semiconductor structure includes: a (2k−1)th common confining layer arranged between a kth active layer and a kth tunnel junction and in contact with the kth tunnel junction; and a 2kth common confining layer arranged between the kth active layer and a (k+1)th tunnel junction and in contact with the kth tunnel junction, where a forbidden band width of a kth quantum well layer is less than both a forbidden band width of a kth first-semiconductor layer and a forbidden band width of a kth second-semiconductor layer; a total thickness of the (2k−1)th common confining layer and the 2kth common confining layer is greater than a critical optical field coupling thickness and less than or equal to twice the critical optical field coupling thickness; and a thickness of the kth quantum well layer is less than or equal to 1/10 of a thickness of the (2k−1)th common confining layer, and the thickness of the kth quantum well layer is less than or equal to 1/10 of a thickness of the 2kth common confining layer. The multi-active area semiconductor structure has effectively improved light-emission efficiency and reduced optical field crosstalk.