- 专利标题: LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE
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申请号: US18396801申请日: 2023-12-27
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公开(公告)号: US20240215290A1公开(公告)日: 2024-06-27
- 发明人: Hiromi NOWATARI , Satoshi SEO , Nobuharu OHSAWA , Takahiro USHIKUBO , Tetsuo TSUTSUI
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi-shi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP 09131096 2009.05.29
- 分案原申请号: US16006024 2018.06.12
- 主分类号: H10K50/13
- IPC分类号: H10K50/13 ; B82Y10/00 ; H10K50/11 ; H10K50/19 ; H10K85/20 ; H10K85/30 ; H10K85/60 ; H10K101/40
摘要:
An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≤m≤n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.
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