- 专利标题： TRANSISTORS WITH BACKSIDE SOURCE/DRAIN CONTACT AND SPACER
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申请号： US18075034申请日： 2022-12-05
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公开(公告)号： US20240186219A1公开(公告)日： 2024-06-06
- 发明人: Tsung-Sheng Kang , Tao Li , Ruilong Xie , Chih-Chao Yang
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L29/06 ; H01L29/417 ; H01L29/66 ; H01L29/786
摘要：
A semiconductor structure includes a first backside power rail disposed on a portion of a sidewall and a bottom surface of a backside source/drain contact, a first sidewall spacer disposed on another sidewall of the backside source/drain contact, and a backside signal line disposed on the first sidewall spacer and separated from the backside source/drain contact.
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