Invention Publication
- Patent Title: THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE
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Application No.: US18413059Application Date: 2024-01-16
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Publication No.: US20240164141A1Publication Date: 2024-05-16
- Inventor: Keunwoo Kim
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-Si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-Si
- Priority: KR 20200162678 2020.11.27
- The original application number of the division: US17411870 2021.08.25
- Main IPC: H10K59/121
- IPC: H10K59/121

Abstract:
Provided are a thin-film transistor substrate that has enhanced electrical characteristics, such as off-current characteristics of a thin-film transistor, without increasing the number of mask processes, a display apparatus, and a method of manufacturing the thin-film transistor substrate. The thin-film transistor substrate includes: a semiconductor layer including a first conductive region, a second conductive region, and a first semiconductor region; a lower electrode disposed on the semiconductor layer and at least partially overlapping the first semiconductor region; and an upper electrode disposed on the lower electrode and at least partially overlapping the first semiconductor region, a first boundary between the first semiconductor region and the first conductive region coincides with an edge of the upper electrode, and a second boundary between the first semiconductor region and the second conductive region coincides with an edge of the lower electrode or an edge of the upper electrode.
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