Invention Publication
- Patent Title: NON-VOLATILE MEMORY WITH DUMMY WORD LINE ASSISTED PRE-CHARGE
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Application No.: US18357467Application Date: 2023-07-24
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Publication No.: US20240145006A1Publication Date: 2024-05-02
- Inventor: Peng Zhang , Yanli Zhang , Dengtao Zhao , Jiacen Guo
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G11C16/04 ; G11C16/10 ; G11C16/34

Abstract:
Memory cells of a second sub-block are programmed by pre-charging channels of unselected memory cells connected to the selected word line, boosting the pre-charged channels of unselected memory cells and applying a program voltage to selected non-volatile memory cells connected to the selected word line. The pre-charging includes applying one or more overdrive voltages to word lines connected to memory cells of a first sub-block to provide a conductive path from memory cells of the second sub-block through the first sub-block to a source line and maintaining the word lines connected to memory cells of the first sub-block at one or more overdrive voltages while ramping down signals at the end of the pre-charging. Dummy word lines, positioned between sub-blocks, are maintained at a resting voltage during the boosting in order to cut-off channels of memory cells in the second sub-block from channels of memory cells in the first sub-block.
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