- 专利标题： SEMICONDUCTOR DEVICE WITH STACKED CONDUCTIVE LAYERS AND RELATED METHODS
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申请号： US18485565申请日： 2023-10-12
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公开(公告)号： US20240128215A1公开(公告)日： 2024-04-18
- 发明人: Takashi NOMA , Shinzo ISHIBE
- 申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 申请人地址： US AZ Scottsdale
- 专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址： US AZ Scottsdale
- 主分类号： H01L23/00
- IPC分类号： H01L23/00
摘要：
A device may include an insulating layer disposed on a frontside of a semiconductor layer, and may include a first conductive contact disposed in a first opening in the insulating layer. The device may include a second conductive contact disposed in a second opening in the insulating layer, and may include a stacked conductive layer disposed on the first conductive contact and excluded from the second conductive contact.
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