Invention Publication
- Patent Title: PREPARATION METHOD OF PEROVSKITE FILM BASED ON SEM-HCL ADDITIVE AND OF PHOTOVOLTAIC DEVICE
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Application No.: US18469581Application Date: 2023-09-19
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Publication No.: US20240099126A1Publication Date: 2024-03-21
- Inventor: Ligang Xu , Wenbo Jia , Dongdong Yan
- Applicant: Nanjing University of Posts & Telecommunications
- Applicant Address: CN Nanjing
- Assignee: Nanjing University of Posts & Telecommunications
- Current Assignee: Nanjing University of Posts & Telecommunications
- Current Assignee Address: CN Nanjing
- Priority: CN 22111406263 2022.09.19
- Main IPC: H10K85/50
- IPC: H10K85/50 ; H10K30/10 ; H10K30/50 ; H10K30/86 ; H10K71/12

Abstract:
A preparation method of perovskite film based on semicarbazide hydrochloride (SEM-HCl) additive and a preparation method of photovoltaic device are provided, a perovskite optimized crystallization strategy is provided, a tin-based perovskite thin film is prepared based on a solution method, and a purpose of regulating and controlling perovskite crystallization is achieved by means of a cross-linking effect of special groups in SEM-HCl and perovskite components. Defects of crystals of the prepared perovskite film are reduced, the non-radiative recombination in a transmission process of carriers is suppressed, and a photoelectric conversion efficiency and a photovoltaic device stability are remarkably improved.
Public/Granted literature
- US11968886B2 Preparation method of perovskite film based on SEM-HCl additive and of photovoltaic device Public/Granted day:2024-04-23
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