Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE WITH SPACER AND C-SHAPED CHANNEL PORTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH SPACER AND C-SHAPED CHANNEL PORTION, AND ELECTRONIC APPARATUS
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Application No.: US18343634Application Date: 2023-06-28
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Publication No.: US20240096709A1Publication Date: 2024-03-21
- Inventor: Huilong ZHU
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Beijing
- Priority: CN 2211133997.9 2022.09.16
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/775
Abstract:
Disclosed are a semiconductor device with a spacer and a C-shaped channel portion, a method of manufacturing the same, and an electronic apparatus including the semiconductor device. The semiconductor device may include: a channel portion on a substrate, wherein the channel portion includes a curved nanosheet or nanowire with a C-shaped cross-section; a first source/drain portion and a second source/drain portion respectively located at upper and lower ends of the channel portion with respect to the substrate; a first gate stack and a second gate stack located on opposite sides of the channel portion; a first spacer located between the first gate stack and the first source/drain portion and between the first gate stack and the second source/drain portion respectively; and a second spacer located between the second gate stack and the first source/drain portion and between the second gate stack and the second source/drain portion respectively.
Information query
IPC分类:
