Invention Publication
- Patent Title: LIGHTNING PROTECTION FOR POWER MOSFETS
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Application No.: US17887153Application Date: 2022-08-12
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Publication No.: US20240056069A1Publication Date: 2024-02-15
- Inventor: John Dickey
- Applicant: Hamilton Sundstrand Corporation
- Applicant Address: US NC Charlotte
- Assignee: Hamilton Sundstrand Corporation
- Current Assignee: Hamilton Sundstrand Corporation
- Current Assignee Address: US NC Charlotte
- Main IPC: H03K17/082
- IPC: H03K17/082 ; G05F1/569 ; H02H9/02

Abstract:
A power system includes a field effect transistor (FET) with a first terminal, a gate terminal, and a third terminal. A Zener diode is connected in series between the first terminal of the FET and the gate terminal of the FET. The Zener diode is oriented to allow current through the Zener diode only if its voltage difference is at or over the Zener voltage of the Zener diode. A capacitor is connected in parallel with the Zener diode. The capacitor is configured to raise gate drive current of the FET during a rising edge of a lightning transient and thereby reduce voltage drop across the FET faster than the Zener diode can do on its own.
Public/Granted literature
- US12132471B2 Lightning protection for power MOSFETs Public/Granted day:2024-10-29
Information query
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