An ion implantation system has an ion source to generate an ion beam, and a mass analyzer to define a first ion beam having desired ions at a first charge state. A first linear accelerator accelerates the first ion beam to a plurality of first energies. A charge stripper strips electrons from the desired ions defining a second ion beam at a plurality of second charge states. A first dipole magnet spatially disperses and bends the second ion beam at a first angle. A charge defining aperture passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus spatially focuses the second ion beam, defining a third ion beam. A second dipole magnet bends the third ion beam at a second angle. A second linear accelerator accelerates the third ion beam. A final energy magnet bends the third ion beam at a third angle, and wherein an energy defining aperture passes only the desired ions at a desired energy and charge state.