发明公开
- 专利标题: SOLID-STATE IMAGE SENSOR
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申请号: US18195114申请日: 2023-05-09
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公开(公告)号: US20230336893A1公开(公告)日: 2023-10-19
- 发明人: Takashi Moue , Yosuke Ueno
- 申请人: Sony Semiconductor Solutions Corporation
- 申请人地址: JP Kanagawa
- 专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人地址: JP Kanagawa
- 优先权: JP 19028965 2019.02.21
- 主分类号: H04N25/772
- IPC分类号: H04N25/772 ; H04N25/57 ; H04N25/75 ; H04N25/709
摘要:
A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.
公开/授权文献
- US11962927B2 Solid-state image sensor 公开/授权日:2024-04-16
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