- 专利标题： UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY, UNDERLAYER FILM, AND PATTERN FORMATION METHOD
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申请号： US18021160申请日： 2021-08-03
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公开(公告)号： US20230324801A1公开(公告)日： 2023-10-12
- 发明人: Hiroaki YAMAMOTO , Atsuko IWASAKI , Takashi MAKINOSHIMA , Masatoshi ECHIGO
- 申请人： Mitsubishi Gas Chemical Company, Inc.
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Gas Chemical Company, Inc.
- 当前专利权人： Mitsubishi Gas Chemical Company, Inc.
- 当前专利权人地址： JP Tokyo
- 优先权： JP 20137095 2020.08.14 JP 20204846 2020.12.10 JP 20204895 2020.12.10
- 国际申请： PCT/JP2021/028785 2021.08.03
- 进入国家日期： 2023-02-13
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; C08G8/10 ; C08G8/32 ; C08G12/08 ; C08G12/40 ; H01L21/027 ; G03F7/16
摘要：
An object of the present invention is to provide a resist underlayer film forming composition for lithography that has features of having excellent smoothing performance on an uneven substrate, good embedding performance into a fine hole pattern, and a smoothed wafer surface after film formation, and the like. The object can be achieved by an underlayer film forming composition for lithography containing a compound having a protecting group.
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