- 专利标题: INTEGRATED DRY PROCESSES FOR PATTERNING RADIATION PHOTORESIST PATTERNING
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申请号: US18184545申请日: 2023-03-15
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公开(公告)号: US20230290657A1公开(公告)日: 2023-09-14
- 发明人: Jengyi Yu , Samantha S.H. Tan , Mohammed Haroon Alvi , Richard Wise , Yang Pan , Richard Alan Gottscho , Adrien LaVoie , Sivananda Krishnan Kanakasabapathy , Timothy William Weidman , Qinghuang Lin , Jerome S. Hubacek
- 申请人: Lam Research Corporation
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 主分类号: H01L21/67
- IPC分类号: H01L21/67 ; G03F7/38 ; G03F7/16 ; G03F7/004 ; G03F7/36
摘要:
Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.
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