A method for producing a semiconductor arrangement includes: forming a first metallization layer on a first side of a dielectric insulation layer, the first metallization layer having at least two sections, each section being separated from a neighboring section by a recess; arranging a semiconductor body on one of the sections of the first metallization layer; and forming at least one indentation between a first side of the semiconductor body and a closest edge of the respective section of the first metallization layer. A distance between the first side and the closest edge of the section of the first metallization layer is between 0.5 mm and 5 mm.