- 专利标题： RESONANT TUNNELING DIODE, OSCILLATOR AND DETECTION SYSTEM
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申请号： US18156508申请日： 2023-01-19
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公开(公告)号： US20230246112A1公开(公告)日： 2023-08-03
- 发明人: TATSURO UCHIDA
- 申请人： CANON KABUSHIKI KAISHA
- 申请人地址： JP Tokyo
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP 22012278 2022.01.28
- 主分类号： H01L29/88
- IPC分类号： H01L29/88 ; H01L29/66
摘要：
A resonant tunneling diode includes a substrate, and a mesa structure including a compound semiconductor layer including a heterojunction comprising a multi-barrier structure disposed on the substrate, and an electrode disposed on the upper surface of the compound semiconductor layer. An outer edge portion of the compound semiconductor layer is a first region including crystal defects, and the first region and the electrode are set apart from each other.
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