- 专利标题： MEMORY DEVICE AND METHOD OF FORMING THE SAME
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申请号： US17574518申请日： 2022-01-12
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公开(公告)号： US20230225131A1公开(公告)日： 2023-07-13
- 发明人: Meng-Han Lin , Han-Jong Chia , Feng-Cheng Yang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/11597
- IPC分类号： H01L27/11597 ; H01L27/11587
摘要：
A memory device includes a first etch stop layer, an etch stop pattern, a second etch stop layer, a plurality of stacks and a first conductive pillar. The etch stop pattern is disposed in the first etch stop layer. The second etch stop layer is disposed on the first etch stop layer and the etch stop pattern, wherein a material of the etch stop pattern is different from a material of the first etch stop layer and a material of the second etch stop layer. The stacks are disposed on the second etch stop layer. The first conductive pillar is disposed between the stacks, wherein the first conductive pillar extends along the stacks and the second etch stop layer to be in physical contact with the etch stop pattern.
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