Invention Publication
- Patent Title: Magnetic Flux Guiding Device With Spin Torque Oscillator (STO) Film Having Negative Spin Polarization Layers In Assisted Writing Application
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Application No.: US18102975Application Date: 2023-01-30
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Publication No.: US20230178103A1Publication Date: 2023-06-08
- Inventor: Wenyu Chen , Shohei Kawasaki , Tetsuya Roppongi
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Main IPC: G11B5/31
- IPC: G11B5/31 ; G11B5/11 ; G11B5/127 ; G11B5/235

Abstract:
A STRAMR structure is disclosed. The STRAMR structure can include a spin torque oscillator (STO) device in a WG provided between the mail pole (MP) trailing side and a trailing shield. The STO device, includes: a flux guiding layer that has a negative spin polarization (nFGL) with a magnetization pointing substantially parallel to the WG field without the current bias and formed between a first spin polarization preserving layer (ppL1) and a second spin polarization preserving layer (ppL2); a positive spin polarization (pSP) layer that adjoins the TS bottom surface; a non-spin polarization preserving layer (pxL) contacting the MP trailing side; a first negative spin injection layer (nSIL1) between the ppL2 and a third spin polarization preserving layer (ppL3); and a second negative spin injection layer (nSIL2) between the ppL3 and the pxL, wherein the nFGL, nSIL1, and nSIL2 have a spin polarization that is negative.
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