- 专利标题: QUALITY PREDICTION METHOD, PREPARATION METHOD AND SYSTEM OF CONDUCTIVE GALLIUM OXIDE BASED ON DEEP LEARNING AND EDGE-DEFINED FILM-FED GROWTH METHOD
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申请号: US17760945申请日: 2021-02-08
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公开(公告)号: US20230162819A1公开(公告)日: 2023-05-25
- 发明人: Hongji QI , Duanyang CHEN , Qinglin SAI
- 申请人: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- 申请人地址: CN Hangzhou, Zhejiang
- 专利权人: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- 当前专利权人: HANGZHOU FUJIA GALLIUM TECHNOLOGY CO. LTD.
- 当前专利权人地址: CN Hangzhou, Zhejiang
- 优先权: CN 2011638965.5 2020.12.31
- 国际申请: PCT/CN2021/076070 2021.02.08
- 进入国家日期: 2022-03-16
- 主分类号: G16C20/30
- IPC分类号: G16C20/30 ; G16C20/70 ; C30B15/20 ; C30B29/16
摘要:
A conductive gallium oxide quality prediction method based on deep learning and an edge-defined film-fed crystal growth method, a preparation method and a system; the quality prediction method includes the following steps: obtaining preparation data of a conductive gallium oxide single crystal prepared by the edge-defined film-fed crystal growth method, the preparation data including seed crystal data, environment data and control data, and the control data including doping element concentration and doping element type; preprocessing the preparation data to obtain preprocessed preparation data; inputting the preprocessing preparation data into a trained neural network model, acquiring the predicted quality data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted quality data including predicted carrier concentration.
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