Invention Application
- Patent Title: CHEMICAL VAPOR DEPOSITION FURNACE WITH A CLEANING GAS SYSTEM TO PROVIDE A CLEANING GAS
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Application No.: US17810773Application Date: 2022-07-05
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Publication No.: US20230008131A1Publication Date: 2023-01-12
- Inventor: Dieter Pierreux , Theodorus G.M Oosterlaken , Herbert Terhorst , Lucian Jdira , Bert Jongbloed
- Applicant: ASM IP Holding, B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding, B.V.
- Current Assignee: ASM IP Holding, B.V.
- Current Assignee Address: NL Almere
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C23C16/34 ; C23C16/52 ; C23C16/455

Abstract:
A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace having a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with a plurality of vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the processing chamber.
Public/Granted literature
- US12077854B2 Chemical vapor deposition furnace with a cleaning gas system to provide a cleaning gas Public/Granted day:2024-09-03
Information query
IPC分类: