- 专利标题: THERMAL INTERCONNECT STRUCTURE FOR THERMAL MANAGEMENT OF ELECTRICAL INTERCONNECT STRUCTURE
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申请号: US17097441申请日: 2020-11-13
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公开(公告)号: US20220157690A1公开(公告)日: 2022-05-19
- 发明人: Shao-Kuan Lee , Cherng-Shiaw Tsai , Ting-Ya Lo , Cheng-Chin Lee , Chi-Lin Teng , Kai-Fang Cheng , Hsin-Yen Huang , Hsiao-Kang Chang , Shau-Lin Shue
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/373
- IPC分类号: H01L23/373 ; H01L23/48 ; H01L21/768
摘要:
In some embodiments, the present disclosure relates to an integrated chip that includes an electrical interconnect structure, a thermal interconnect structure, and a thermal passivation layer over a substrate. The electrical interconnect structure includes interconnect vias and interconnect wires embedded within interconnect dielectric layers. The thermal interconnect structure is arranged beside the electrical interconnect structure and includes thermal vias, thermal wires, and/or thermal layers. Further, the thermal interconnect structure is embedded within the interconnect dielectric layers. The thermal passivation layer is arranged over a topmost one of the interconnect dielectric layers. The thermal interconnect structure has a higher thermal conductivity than the interconnect dielectric layers.
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