- 专利标题： IN-SITU SYNTHESIS AND DEPOSITION OF HIGH ENTROPY ALLOY AND MULTI METAL OXIDE NANO/MICRO PARTICLES BY FEMTOSECOND LASER DIRECT WRITING
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申请号： US17502539申请日： 2021-10-15
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公开(公告)号： US20220121122A1公开(公告)日： 2022-04-21
- 发明人: Chidanand HEGDE , Chin Huat Joel LIM , Hua LI
- 申请人： PANASONIC FACTORY SOLUTIONS ASIA PACIFIC
- 申请人地址： SG Singapore
- 专利权人： PANASONIC FACTORY SOLUTIONS ASIA PACIFIC
- 当前专利权人： PANASONIC FACTORY SOLUTIONS ASIA PACIFIC
- 当前专利权人地址： SG Singapore
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/004
摘要：
A method for synthesizing and simultaneously depositing and coating one or more layers of mixed metals to obtain one or more layers of high entropy alloys (HEAs) includes depositing a first metal precursor ink and drying the first metal precursor ink to obtain a first precursor film layer, applying a laser-direct writing (LDW) with pulsed laser source to the first precursor film layer to obtain a first layer of HEA, and rinsing the first layer of HEA with water to remove un-sintered precursor film to obtain one or more layers of HEAs. The first layer of HEA has a first metal corresponding to the first metal precursor. The one or more layers of HEAs includes a predetermined pattern of one or more layers, and the one or more layers may have a single metal or multiple metals.
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