- 专利标题: INFRARED LIGHT EMITTERS BASED ON INTERBAND TUNNELING IN UNIPOLAR DOPED N-TYPE TUNNELING STRUCTURES
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申请号: US17083286申请日: 2020-10-28
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公开(公告)号: US20220020896A1公开(公告)日: 2022-01-20
- 发明人: Elliott R. Brown , Weidong Zhang , Tyler Growden , Paul Berger
- 申请人: Wright State University
- 申请人地址: US OH Dayton
- 专利权人: Wright State University
- 当前专利权人: Wright State University
- 当前专利权人地址: US OH Dayton
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/14 ; H01L33/06 ; H01S5/343 ; H01S5/347
摘要:
A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.
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