A semiconductor laser according to an embodiment of the present disclosure includes a semiconductor stack section. The semiconductor stack section includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, in which the second semiconductor layer is stacked on the first semiconductor layer and includes a ridge having a band shape, and an active layer. The semiconductor stack section further has an impurity region that is at least a portion of a region not facing the ridge and that is located at a position deeper than at least the active layer, in which the impurity region has an impurity concentration of the second conductivity type higher than an impurity concentration of the second conductivity type in a region, of the second semiconductor layer, facing the ridge.