The nanoimprint mold (100) includes a base substrate (10). The base substrate (10) includes a main area (MA) and a secondary area (SA) surrounding the main area (MA). The main area (MA) includes a molding structure (16), and the molding structure (16) includes a plurality of first concave portions (18) and a plurality of first convex portions (20). The secondary area (SA) includes a grating structure (22), and the grating structure (22) includes a plurality of second concave portions (24) and a plurality of second convex portions (26). A height of at least one of the second convex portions (26) is larger than a height of at least one of the first convex portions (20). The nanoimprint mold (100), manufacturing method thereof, and pattern transfer method using nanoimprint mold (100) make the overflow of the nanoimprint resist in the secondary area (SA) of the nanoimprint mold (100) is significantly suppressed, and the topography of pattern in the secondary area (SA) of the nanoimprint mold (100) is significantly improved. Furthermore, the thickness of the resist layer in the adjacent areas will not be significantly increased. Accordingly, the defective area of the pattern of the resist layer, especially at the joint area between the two nanoimprinting positions, is significantly reduced.