Provided are a photodiode and a manufacturing method, a sensor and a sensor array. The photodiode comprises: a semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; and a photodiode region formed in a pre-determined region of the epitaxial layer and used for generating photo-generated carriers, wherein the photodiode region comprises at least two doped regions, and the doped regions of different potentials from among the at least two doped regions are arranged from the edge of the photodiode region to the geometric center of the photodiode region. By means of the photodiode, photo-generated carriers randomly distributed in a photodiode region are first concentrated at a specified position and then reach a transmission gate through the specified position, thereby significantly improving the response speed and measurement accuracy of the photodiode.