发明申请
- 专利标题： STACKED TRANSISTORS WITH SI PMOS AND HIGH MOBILITY THIN FILM TRANSISTOR NMOS
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申请号： US16772636申请日： 2018-03-28
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公开(公告)号： US20210091080A1公开(公告)日： 2021-03-25
- 发明人: Gilbert DEWEY , Ravi PILLARISETTY , Abhishek A. SHARMA , Aaron D. LILAK , Willy RACHMADY , Rishabh MEHANDRU , Kimin JUN , Anh PHAN , Hui Jae YOO , Patrick MORROW , Cheng-Ying HUANG
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 国际申请： PCT/US2018/024914 WO 20180328
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L27/12 ; H01L21/8254
摘要：
An integrated circuit structure comprises a lower device layer that includes a first structure comprising a plurality of PMOS transistors. An upper device layer is formed on the lower device layer, wherein the upper device layer includes a second structure comprising a plurality of NMOS thin-film transistors (TFT).
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