Invention Application
- Patent Title: INTEGRATED CIRCUIT BACKSIDE METALLIZATION
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Application No.: US17009664Application Date: 2020-09-01
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Publication No.: US20210035932A1Publication Date: 2021-02-04
- Inventor: Hiroyuki SADA , Shoichi IRIGUCHI , Genki YANO , Luu Thanh NGUYEN , Ashok PRABHU , Anindya PODDAR , Yi YAN , Hau NGUYEN
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/78

Abstract:
A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.
Public/Granted literature
- US11367699B2 Integrated circuit backside metallization Public/Granted day:2022-06-21
Information query
IPC分类: